How to Maximize Cost-Performance with GaN Technology
News & Insights
December 22, 2025
How to Maximize Cost-Performance with GaN Technology
With continuous technological advancement and rising living standards, global demand for energy and power is steadily increasing. As a result, higher requirements are being placed on power conversion efficiency, system size, and weight.
In recent years, the rapid development of switching power supply technologies has significantly improved power density, efficiency, and design flexibility. However, further performance gains are increasingly constrained by the limitations of power devices themselves.
Due to the slow pace of innovation in magnetic materials and the difficulty of achieving breakthroughs in topology design, wide-bandgap semiconductors have gained widespread attention. With their high switching speed and lower on-resistance compared to traditional semiconductors, they are increasingly being adopted in switching power supplies.
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Overview of Wide-bandgap Semiconductor Materials
Wide-bandgap semiconductors are primarily based on wide bandgap materials such as:
• Silicon Carbide (SiC)
• Gallium Nitride (GaN)
• Zinc Oxide (ZnO)
• Aluminum Nitride (AlN)
Among these, SiC and GaN are the most widely adopted for power switching applications.
However, for many engineers, GaN and SiC remain relatively new materials. Their understanding often stays at the level of application guidance provided by manufacturers, without fully exploring:
• Why these materials are needed in modern power systems
• How to apply them effectively
• How to fully leverage their performance advantages
• Whether their use truly achieves optimal cost-performance
To answer these questions, it is essential to first understand the advantages and limitations of wide-bandgap semiconductors, and then identify the most suitable application scenarios.
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Case Study: THINKANTECH GaN HEMT (XG6510B8)
Using THINKANTECH’s GaN HEMT device XG6510B8 as an example:
Key Characteristics of GaN HEMT
Advantages:
1. Lower on-resistance than silicon devices at the same die size
2. Much higher switching frequency
o Optimal operating range: 200 kHz – 1.5 MHz
Limitation:
Compared to Si MOSFETs with the same on-resistance, they have smaller die size, reduced thermal dissipation area and lower overcurrent capability.
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Key Characteristics of Si MOSFET
1. Higher on-resistance at the same die size compared to GaN
2. Lower switching frequency
o Typical range: 10 kHz – 200 kHz
3. Larger die size for the same on-resistance, but stronger overcurrent capability
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How to Achieve Optimal Cost-Performance with GaN
From the comparison above, it is clear that GaN power devices offer distinct advantages and trade-offs compared to silicon devices.
To fully leverage GaN technology, engineers must:
• Select the right application scenarios
• Choose appropriate controllers
• Maximize GaN’s strengths in low on-resistance and high switching frequency
Given current limitations in magnetic materials, THINKANTECH recommends:
• Operating GaN devices at approximately 250 kHz switching frequency
• Using DFN88-packaged devices under about 0.6 W power dissipation
Taking both conduction and switching losses into account, THINKANTECH has developed a range of GaN-based power supplies using various topologies, including:
• Bridged PFC
• Bridgeless PFC
• Half-bridge LLC
• Phase-shifted full bridge
These solutions span multiple power levels:
100W, 130W, 180W, 200W, 250W, 350W, 500W, and 1kW
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Future Outlook
As a rapidly growing company, THINKANTECH continues to advance its technology capabilities. Looking ahead, its engineering team aims to develop single-chip GaN solutions reaching up to ~2.8 kW, further unlocking the full potential of GaN in switching power applications.
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Conclusion
Based on extensive research and application experience, THINKANTECH can achieve optimal cost-performance while fully leveraging the advantages of GaN HEMT devices, the most suitable application range for switching power supplies lies between 200W and 3kW, across both AC and DC systems.
THINKANTECH remains committed to innovation and collaboration, and looks forward to engaging in deeper technical exchanges with partners to advance the adoption of wide-bandgap semiconductor power devices in switching power applications.
