Wide-bandgap Semiconductor GaN Power Devices: A Breakthrough Opportunity in a High-Growth Market
News & Updates
December 16, 2025
Wide-bandgap Semiconductor GaN Power Devices: A Breakthrough Opportunity in a High-Growth Market
01. What Are GaN Power Devices?
Traditional semiconductor materials, represented by silicon (Si) and germanium (Ge), laid the foundation for the semiconductor industry. As technology advanced, semiconductor materials, such as gallium arsenide (GaAs) and indium antimonide (InSb), brought strong high-frequency and high-speed performance, significantly enhancing electronic devices.
Wide-bandgap semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN) are widely used due to their superior performance. Among them, SiC and GaN are the most mature and commercially advanced.
GaN power devices refer to power semiconductor devices manufactured using gallium nitride (GaN). One of the most important forms is the GaN HEMT (High Electron Mobility Transistor). Thanks to its exceptional electron mobility, the GaN HEMT demonstrates outstanding performance in high-frequency and high-power applications, making it an indispensable component in modern electronic systems.
02. THINKANTECH GaN Power Devices and Their Applications
Nanjing THINKANTECH focuses on the R&D of power semiconductor devices. Its product portfolio includes:
• Si MOSFETs & IGBTs
• GaN HEMTs
• SiC MOSFETs & SBDs
• IGBTs
• SiC modules
As one of the few companies active in both SiC and GaN power devices, THINKANTECH has built a diversified product matrix and established the capability to provide stable, high-volume supply to downstream customers.
The company currently offers nearly 60 products, covering a wide voltage range from 40V to 1700V, serving applications such as:
• Consumer power supplies
• Industrial power systems
• Electric vehicles
• Server power supplies
• Photovoltaics and energy storage
• Charging infrastructure
• Industrial automation
• Artificial intelligence and AI computing
Innovative Dual-Gate Drive GaN HEMT Design
To meet the requirement for minimizing high-frequency loop inductance in power supply design, THINKANTECH has developed a unique dual-gate drive GaN HEMT. This allows customers to flexibly select different gate configurations during PCB layout design, while significantly reducing the high-frequency loop in parallel GaN HEMT applications.
Its design features include:
• Kelvin drive pins, separating power ground from drive ground to reduce common-source inductance
• Minimized gate drive loop, with the drive ground placed on the second layer and the drive signal on the first layer to form the smallest possible loop
• Source pad vias connected to large copper areas on other layers for enhanced heat dissipation
• Symmetrical driver layout when multiple devices are used in parallel, greatly simplifying EMC design
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Technical Advantages of THINKANTECH GaN HEMTs include higher switching frequency (250 kHz and above), superior thermal performance, improved EMI characteristics, greater PCB layout flexibility and lower cost.
Our GaN products have earned strong market recognition. In 2023, the company became one of the first in China to achieve mass production of 2kW E-mode GaN chargers. These products are already deployed in consumer, industrial, and electric vehicle power systems. Through continuous innovation, THINKANTECH GaN products have secured a leading domestic position, and with its proprietary GaN chip design technology, their performance is now on par with that of leading international competitors.
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Advanced Technology and Reliability
THINKANTECH independently masters some of the industry’s most advanced design and packaging technologies, and its products have successfully passed automotive-grade 1,000-hour reliability testing.
The company successfully entered the supplier whitelist of a top-tier global AI computing server provider, and has supported multiple listed companies in the successful development of GaN power products.
Our GaN product portfolio covers power levels from 100W to 11kW, meeting the needs of industries such as consumer electronics, industrial automation, energy and power systems, and automotive power systems.
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03. Policy Support for Semiconductors and the Growth of GaN HEMT Applications
Since the beginning of China’s 14th Five-Year Plan, the country has devoted unprecedented attention and support to the wide-bandgap semiconductor industry. The goal is to accelerate industry development, improve supply chain autonomy and controllability, and address key technological bottlenecks.
Several provinces have already established concrete development targets covering the full semiconductor value chain, including raw material supply, chip design, wafer fabrication, as well as packaging and testing.
According to industry statistics, the global GaN semiconductor device market reached RMB 6.9 billion in 2023, and is projected to grow to RMB 9.9 billion by 2030, representing a compound annual growth rate (CAGR) of 5.4% from 2024 to 2030.
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Falling Costs and Expanding Market Adoption
As wide-bandgap semiconductor technology continues to mature and production costs gradually decline, the GaN market has already experienced a notable drop in prices over recent years. This reflects both technological progress and improved market competitiveness. With further technological advancement and broader application adoption, GaN product prices are expected to remain stable or decline gradually, supporting wider market penetration and continued growth of the overall GaN industry.
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Application Differences Between GaN HEMT, Si MOS, and SiC MOS
From the Wafer Manufacturing Perspective
(1) Si MOSFET
Silicon ingots are first sliced into wafers, then polished, followed by epitaxial growth, photolithography, ion implantation, diffusion, and high-temperature annealing to form MOS devices.
(2) Si-Based GaN HEMT
A series of III-V materials (such as AlN, GaN, and AlGaN) are epitaxially grown on a silicon substrate, then processed via photolithography and compound deposition to form HEMT devices.
(3) SiC MOSFET
SiC MOS devices are fabricated on SiC substrates grown by sublimation, followed by homoepitaxial growth (e.g., CVD), thermal oxidation, ion implantation, and etching.
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Cost and Application Positioning
SiC material is the most expensive material and has the highest production cost, they are best suited for high-temperature, high-voltage, high-power applications
GaN’s manufacturing cost is higher than that of silicon, they are ideal for applications requiring compact size, medium-to-low power, high frequency, and high power density.
Silicon is more suitable for cost-sensitive, low-end consumer electronics
As GaN technology continues to mature and become more cost-effective, it is expected to play an increasingly important role in the future electronics industry, providing strong momentum for development across multiple sectors.
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About THINKANTECH Technology
THINKANTECH Technology is a high-tech enterprise specializing in the design and development of wide-bandgap power semiconductor devices and modules. Founded by experts in power semiconductors and experienced professionals from the power electronics industry, as well as a team of young entrepreneurial specialists, the company has remained committed to the R&D and commercialization of GaN devices, SiC MOSFETs, Si MOSFETs, IGBTs, as well as SiC and IGBT modules. Our products are widely used in consumer electronics, photovoltaics, energy storage, and automotive power electronics, earning strong market recognition.
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Awards and Recognition
Thanks to its innovation capability and market performance, THINKANTECH has received multiple honors, including:
• 2022 Emerging Power Device Brand Award from 21Dianyuan
• Inclusion in “Most Valuable Semiconductor Investment Companies” by ijiwei in 2022
• Recognition as an Above-Scale Enterprise in 2022
In 2023, THINKANTECH achieved another milestone year, receiving:
• Aurora Award for Wide-bandgap Semiconductors
• Top 10 GaN Power Device Companies in China
• Outstanding SiC Power Device Award
• National Technology-Based SME (2023)
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Looking Ahead to 2024
THINKANTECH is entering a new stage of growth. Supported by national industrial policy, the company has successfully obtained:
• National High-Tech Enterprise certification
• ISO9001 Quality Management System certification
• IATF16949 automotive production quality certification
These achievements provide strong momentum for continued innovation and development. Looking ahead, THINKANTECH will continue to drive progress through innovation, deliver higher-quality products and services, and contribute even more to the prosperity of the power semiconductor industry.
