Award Recognition | THINKANTECH Triumphs at IIC Shanghai 2025, Winning the Prestigious China IC Design Achievement Award

News Update

April 14, 2025

On March 27–28, 2025, IIC Shanghai 2025 (International Integrated Circuit Exhibition and Conference) was successfully held at the Grand Hyatt Shanghai, organized by AspenCore, a globally recognized media group in the electronics industry.

As a frontrunner in the field, THINKANTECH was proudly invited to headline this prestigious industry gathering, collaborating with global technology leaders to explore cutting-edge topologies and capitalize on emerging market vectors.

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Award-Winning Breakthrough: Best Power Device of the Year

At the 2025 China IC Design Achievement Awards Ceremony, THINKANTECH stood out with its GaN Power Module X3G65045HMB (650V / 45 mΩ / Half-Bridge Module) and was honored with the award for: “Best Power Device / Wide Bandgap Device of the Year”

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Key Technical Attributes & Market Impact:

• High-Density Integration: The X3G65045HMB features a highly integrated, co-packaged driver and power stage architecture, drastically reducing external component counts while eliminating parasitic inductance.

• System Optimization: By minimizing system complexity and lowering the overall Bill of Materials cost, it delivers exceptional high-frequency operation, ultra-high conversion efficiency, and optimized thermal management.

• Universal Compatibility: With its outstanding overall figure of merit, this module serves as a seamless, drop-in replacement for traditional 650V Si and SiC MOSFETs in mission-critical applications.

• Target Power Ecosystems: Hyperscale Data Center Power Supplies, Telecom Base Station Power Grids, EV Chargers, and Megawatt-scale Solar Inverters.

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About the China IC Design Achievement Awards

Established and organized by AspenCore for 23 consecutive years, the China IC Design Achievement Awards stand as one of the most authoritative and influential technical accolades in the semiconductor sector. Over more than two decades, the annual gala has evolved into a premier industry barometer, shaping market directions and honoring excellent companies, engineering teams, and visionaries who demonstrate unmatched design prowess and support electronic systems design engineers globally.

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Significance of the Award

This recognition highlights THINKANTECH’s technological leadership in wide-bandgap power semiconductors. It not only affirms the company’s overall capabilities, but also reflects its long-term dedication and deep expertise in fast-charging and power electronics applications.

Winning this award serves as a significant commercial milestone, motivating THINKANTECH to continue its relentless pursuit of engineering excellence and drive sustainable, energy-efficient power paradigms worldwide.

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About THINKANTECH Technology

THINKANTECH Technology is a manufacturer of wide-bandgap power semiconductor devices, founded by industry experts and a team of innovative professionals. The company specializes in the R&D and commercialization of power semiconductor devices and modules, including:

• Si MOSFETs & IGBTs

• GaN HEMTs

• SiC MOSFETs & SBDs

• IGBT and SiC modules

Its products are widely used in consumer electronics, photovoltaics & energy storage, automotive systems, AI servers, and industrial automation.

It is recognized as an Above-Scale Enterprise in 2022, and a National High-Tech Enterprise in 2023. It is also ISO9001 certified and has achieved IATF16949 automotive-grade certification in 2024.

Headquartered in Nanjing, THINKANTECH has established offices across Shenzhen, Suzhou, and other regions in China, with an expanding presence in North America and Taiwan.

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Contact Information

Nanjing Headquarters: +86-25-5118-0705

Shenzhen Branch: +86-755-3699-1759

Email: xinkansen@x-ipm.com

Official Website:

THINKANTECH Technology